Aluminum Nitride(AlN) Substrate
Aluminum Nitride(AlN) Substrate
Characteristics:
Aluminum nitride substrates have excellent thermal conductivity and electrical insulation properties, and are especially suitable for high-temperature components and high-power modules.
In recent years, due to the improvement of the characteristics of LED packaging and power modules, the high thermal conductivity of aluminum nitride substrates has solved the problem of heat dissipation of components.
Laser diodes have been widely used in optical communication and optical storage products.
The high thermal conductivity of aluminum nitride makes aluminum nitride substrates the best material for DPC substrates in laser diode packaging.
The power module plays an indispensable role in the current conversion of electric vehicles.
Aluminum nitride allows the high heat generated by the conversion operation of the power module to be properly dissipated to maintain the efficiency of the module switching operation.
Therefore, it is indispensable for both DBC and AMB substrates.
Ceramic circuit boards made of aluminum nitride substrates are not only used in high-power LEDs, laser diodes, and IC packaging, but also in other power products such as electric vehicles, high-speed rail, trams, wind power, solar power, etc.
Featured as
- Ultra-high thermal conductivity, 8 times that of alumina substrate
- Low thermal expansion coefficient
Dimensions:
- Maximum size : 190x140mm
- Thickness : 0.25/0.38/0.5/0.635mm
- Camber <0.3%